MBR60035 Series

Catalog

DIODE MOD SCHOTT 35V 300A 2TOWER

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io) (per Diode)	Diode Configuration	Current - Reverse Leakage @ Vr	Supplier Device Package	Package / Case	Voltage - Forward (Vf) (Max) @ If	Technology	Mounting Type
GeneSiC Semiconductor MBR60035CT	150 °C	-55 °C	200 mA 500 ns	35 V	300 A	1 Pair Common Cathode	1 mA	Twin Tower	Twin Tower	750 mV	Schottky	Chassis Mount
GeneSiC Semiconductor MBR60035CTL	150 °C	-55 °C	200 mA 500 ns	35 V	300 A	1 Pair Common Cathode	3 mA	Twin Tower	Twin Tower	600 mV	Schottky	Chassis Mount
GeneSiC Semiconductor MBR60035CTRL	150 °C	-55 °C	200 mA 500 ns	35 V	300 A	1 Pair Common Anode	3 mA	Twin Tower	Twin Tower	600 mV	Schottky	Chassis Mount