AOWF11N70

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 700V 11A TO262F

Search across all available documentation for this part.

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 700V 11A TO262F

Technical Specifications

Parameters and characteristics for this part

Specification	AOWF11N70

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]	28 W
Rds On (Max) @ Id, Vgs [Max]	870 mOhm
Supplier Device Package	TO-262F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Supplier Device Package	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Vgs (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]
Alpha & Omega Semiconductor Inc. AOWF11S65	TO-262F	28 W	4 V	I2PAK TO-262-3 Long Leads TO-262AA	MOSFET (Metal Oxide)	646 pF	650 V	13.2 nC	N-Channel	30 V	Through Hole	10 V	-55 °C	150 °C	11 A
Alpha & Omega Semiconductor Inc. AOWF11N70	TO-262F	28 W	4.5 V	I2PAK TO-262-3 Long Leads TO-262AA	MOSFET (Metal Oxide)		700 V	45 nC	N-Channel	30 V	Through Hole	10 V	-55 °C	150 °C	11 A	870 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$