MOSFET N-CH 650V 11A TO262F
| Part | Supplier Device Package | Power Dissipation (Max) [Max] | Vgs(th) (Max) @ Id | Package / Case | Technology | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Vgs (Max) | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | TO-262F | 28 W | 4 V | I2PAK TO-262-3 Long Leads TO-262AA | MOSFET (Metal Oxide) | 646 pF | 650 V | 13.2 nC | N-Channel | 30 V | Through Hole | 10 V | -55 °C | 150 °C | 11 A | |
Alpha & Omega Semiconductor Inc. | TO-262F | 28 W | 4.5 V | I2PAK TO-262-3 Long Leads TO-262AA | MOSFET (Metal Oxide) | 700 V | 45 nC | N-Channel | 30 V | Through Hole | 10 V | -55 °C | 150 °C | 11 A | 870 mOhm |