TK5A55D(STA4,Q,M)

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Toshiba Semiconductor and Storage

MOSFET N-CH 550V 5A TO220SIS

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Toshiba Semiconductor and Storage

MOSFET N-CH 550V 5A TO220SIS

Technical Specifications

Parameters and characteristics for this part

Specification	TK5A55D(STA4,Q,M)

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	550 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds	540 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	35 W
Rds On (Max) @ Id, Vgs	1.7 Ohm
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.4 V

Part	Vgs (Max)	Supplier Device Package	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Package / Case	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage TK5A55D(STA4,Q,M)	30 V	TO-220SIS	35 W	550 V	5 A	540 pF	11 nC	MOSFET (Metal Oxide)	TO-220-3 Full Pack	Through Hole	N-Channel	10 V	150 °C	4.4 V	1.7 Ohm

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General part information

N-Channel 550 V 5A (Ta) 35W (Tc) Through Hole TO-220SIS

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