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MOSFET N-CH 550V 5A TO220SIS
| Part | Vgs (Max) | Supplier Device Package | Power Dissipation (Max) [Max] | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Package / Case | Mounting Type | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 30 V | TO-220SIS | 35 W | 550 V | 5 A | 540 pF | 11 nC | MOSFET (Metal Oxide) | TO-220-3 Full Pack | Through Hole | N-Channel | 10 V | 150 °C | 4.4 V | 1.7 Ohm |