2SK2995(F)

Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 250V 30A TO3PIS

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Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 250V 30A TO3PIS

Technical Specifications

Parameters and characteristics for this part

Specification	2SK2995(F)

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	132 nC
Input Capacitance (Ciss) (Max) @ Vds	5400 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	90 W
Rds On (Max) @ Id, Vgs	68 mOhm
Supplier Device Package	TO-3P(N)IS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Technology	Operating Temperature
Toshiba Semiconductor and Storage 2SK2995(F)	Through Hole	3.5 V	TO-3P(N)IS	30 A	250 V	10 V	132 nC	N-Channel	5400 pF	20 V	90 W	68 mOhm	SC-65-3 TO-3P-3	MOSFET (Metal Oxide)	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 250 V 30A (Ta) 90W (Tc) Through Hole TO-3P(N)IS

Technical documentation and resources