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MOSFET N-CH 250V 30A TO3PIS
| Part | Mounting Type | Vgs(th) (Max) @ Id | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Package / Case | Technology | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | Through Hole | 3.5 V | TO-3P(N)IS | 30 A | 250 V | 10 V | 132 nC | N-Channel | 5400 pF | 20 V | 90 W | 68 mOhm | SC-65-3 TO-3P-3 | MOSFET (Metal Oxide) | 150 °C |