C3D10065I

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Wolfspeed

DIODE SIL CARB 650V 19A TO220-2

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Wolfspeed

DIODE SIL CARB 650V 19A TO220-2

Technical Specifications

Parameters and characteristics for this part

Specification	C3D10065I

Capacitance @ Vr, F	480 pF
Current - Average Rectified (Io)	19 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2 Isolated Tab
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220-2 Isolated Tab
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V

Part	Speed	Mounting Type	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Capacitance @ Vr, F	Technology	Package / Case	Supplier Device Package
Wolfspeed C3D10065E	No Recovery Time	Surface Mount	50 µA	1.8 V	650 V	32 A	175 ░C	-55 C	460.5 pF	SiC (Silicon Carbide) Schottky	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252-2
Wolfspeed C3D10065A	No Recovery Time	Through Hole	60 µA	1.8 V	650 V	30 A	175 ░C	-55 C	480 pF	SiC (Silicon Carbide) Schottky	TO-220-2	TO-220-2
Wolfspeed C3D10065I	No Recovery Time	Through Hole	50 µA		650 V	19 A	175 ░C	-55 C	480 pF	SiC (Silicon Carbide) Schottky	TO-220-2 Isolated Tab	TO-220-2 Isolated Tab

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 19A Through Hole TO-220-2 Isolated Tab

Technical documentation and resources