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DIODE SIL CARB 650V 32A TO252-2
| Part | Speed | Mounting Type | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Capacitance @ Vr, F | Technology | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Wolfspeed | No Recovery Time | Surface Mount | 50 µA | 1.8 V | 0 ns | 650 V | 32 A | 175 ░C | -55 C | 460.5 pF | SiC (Silicon Carbide) Schottky | DPAK (2 Leads + Tab) SC-63 TO-252-3 | TO-252-2 |
Wolfspeed | No Recovery Time | Through Hole | 60 µA | 1.8 V | 0 ns | 650 V | 30 A | 175 ░C | -55 C | 480 pF | SiC (Silicon Carbide) Schottky | TO-220-2 | TO-220-2 |
Wolfspeed | No Recovery Time | Through Hole | 50 µA | 0 ns | 650 V | 19 A | 175 ░C | -55 C | 480 pF | SiC (Silicon Carbide) Schottky | TO-220-2 Isolated Tab | TO-220-2 Isolated Tab |