RTQ035P02TR

NRND

Rohm Semiconductor

MOSFET P-CH 20V 3.5A TSMT6

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NRND

Rohm Semiconductor

MOSFET P-CH 20V 3.5A TSMT6

Technical Specifications

Parameters and characteristics for this part

Specification	RTQ035P02TR

Current - Continuous Drain (Id) @ 25°C	3.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1200 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	1.25 W
Rds On (Max) @ Id, Vgs	65 mOhm
Supplier Device Package	TSMT6 (SC-95)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	2 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Vgs(th) (Max) @ Id	Technology	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)
Rohm Semiconductor RTQ035P02TR	1200 pF	65 mOhm	20 V	P-Channel	SOT-23-6 Thin TSOT-23-6	1.25 W	10.5 nC	3.5 A	150 °C	2 V	MOSFET (Metal Oxide)	Surface Mount	2.5 V 4.5 V	TSMT6 (SC-95)	12 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 3.5A (Ta) 1.25W (Ta) Surface Mount TSMT6 (SC-95)

Technical documentation and resources