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MOSFET P-CH 20V 3.5A TSMT6
| Part | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | FET Type | Package / Case | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Operating Temperature | Vgs(th) (Max) @ Id | Technology | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 1200 pF | 65 mOhm | 20 V | P-Channel | SOT-23-6 Thin TSOT-23-6 | 1.25 W | 10.5 nC | 3.5 A | 150 °C | 2 V | MOSFET (Metal Oxide) | Surface Mount | 2.5 V 4.5 V | TSMT6 (SC-95) | 12 V |