PJW5P06A_R2_00001

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Panjit International Inc.

60V P-CHANNEL ENHANCEMENT MODE M

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Panjit International Inc.

60V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJW5P06A_R2_00001

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	3.1 W
Rds On (Max) @ Id, Vgs	68 mOhm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	FET Type
Panjit International Inc. PJW5P06A_R2_00001	20 V	17 nC	3.1 W	68 mOhm	-55 °C	150 °C	SOT-223	5 A	60 V	MOSFET (Metal Oxide)	4.5 V 10 V	Surface Mount	TO-261-4 TO-261AA	2.5 V	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 60 V 5A (Ta) 3.1W (Ta) Surface Mount SOT-223

Technical documentation and resources