60V P-CHANNEL ENHANCEMENT MODE M
| Part | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Technology | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Package / Case | Vgs(th) (Max) @ Id | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Panjit International Inc. | 20 V | 17 nC | 3.1 W | 68 mOhm | -55 °C | 150 °C | SOT-223 | 5 A | 60 V | MOSFET (Metal Oxide) | 4.5 V 10 V | Surface Mount | TO-261-4 TO-261AA | 2.5 V | P-Channel |