G3R45MT17K

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GeneSiC Semiconductor

SIC MOSFET N-CH 61A TO247-4

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GeneSiC Semiconductor

SIC MOSFET N-CH 61A TO247-4

Technical Specifications

Parameters and characteristics for this part

Specification	G3R45MT17K

Current - Continuous Drain (Id) @ 25°C	61 A
Drain to Source Voltage (Vdss)	1700 V
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	182 nC
Input Capacitance (Ciss) (Max) @ Vds	4523 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max)	438 W
Rds On (Max) @ Id, Vgs	58 mOhm
Supplier Device Package	TO-247-4
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	2.7 V

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs (Max)	Supplier Device Package
GeneSiC Semiconductor G3R45MT17K	61 A	182 nC	438 W	1700 V	-55 °C	175 ░C	2.7 V	15 V	TO-247-4	Through Hole	58 mOhm	4523 pF	N-Channel	15 V	TO-247-4

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General part information

N-Channel 1700 V 61A (Tc) 438W (Tc) Through Hole TO-247-4

Technical documentation and resources