SIC MOSFET N-CH 61A TO247-4
| Part | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Mounting Type | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Vgs (Max) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 61 A | 182 nC | 438 W | 1700 V | -55 °C | 175 ░C | 2.7 V | 15 V | TO-247-4 | Through Hole | 58 mOhm | 4523 pF | N-Channel | 15 V | TO-247-4 |