PJD8NA65A_L2_00001

NRND

Panjit International Inc.

650V N-CHANNEL MOSFET

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NRND

Panjit International Inc.

650V N-CHANNEL MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJD8NA65A_L2_00001

Current - Continuous Drain (Id) @ 25°C	7.5 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC
Input Capacitance (Ciss) (Max) @ Vds	1245 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	140 W
Rds On (Max) @ Id, Vgs	1.2 Ohm
Supplier Device Package	TO-252, TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Technology	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs
Panjit International Inc. PJD8NA50_L2_00001	8 A	16.2 nC	30 V	500 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	900 mOhm	130 W	MOSFET (Metal Oxide)	TO-252AA	-55 °C	150 °C	10 V	N-Channel	826 pF	Surface Mount	4 V
Panjit International Inc. PJD8NA65A_L2_00001	7.5 A	29 nC	30 V	650 V	DPAK (2 Leads + Tab) SC-63 TO-252-3		140 W	MOSFET (Metal Oxide)	TO-252 TO-252AA	-55 °C	150 °C	10 V	N-Channel	1245 pF	Surface Mount	4 V	1.2 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 7.5A (Ta) 140W (Tc) Surface Mount TO-252AA

Technical documentation and resources