500V N-CHANNEL MOSFET
| Part | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Drain to Source Voltage (Vdss) | Package / Case | Rds On (Max) @ Id, Vgs [Max] | Power Dissipation (Max) | Technology | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Panjit International Inc. | 8 A | 16.2 nC | 30 V | 500 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 900 mOhm | 130 W | MOSFET (Metal Oxide) | TO-252AA | -55 °C | 150 °C | 10 V | N-Channel | 826 pF | Surface Mount | 4 V | |
Panjit International Inc. | 7.5 A | 29 nC | 30 V | 650 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 140 W | MOSFET (Metal Oxide) | TO-252 TO-252AA | -55 °C | 150 °C | 10 V | N-Channel | 1245 pF | Surface Mount | 4 V | 1.2 Ohm |