CWDM3011N TR13 PBFREE

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Central Semiconductor Corp

MOSFET N-CH 30V 11A 8SOIC

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Central Semiconductor Corp

MOSFET N-CH 30V 11A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	CWDM3011N TR13 PBFREE

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.3 nC
Input Capacitance (Ciss) (Max) @ Vds	860 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	20 V
Vgs(th) (Max) @ Id	3 V

Part	Power Dissipation (Max)	FET Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Package / Case	Package / Case [y]	Package / Case [x]
Central Semiconductor Corp CWDM3011N TR13 PBFREE	2.5 W	N-Channel	20 mOhm	3 V	11 A	Surface Mount	8-SOIC	30 V	20 V	860 pF	-55 °C	150 °C	4.5 V 10 V	6.3 nC	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in

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General part information

N-Channel 30 V 11A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Technical documentation and resources