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MOSFET N-CH 30V 11A 8SOIC
| Part | Power Dissipation (Max) | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Supplier Device Package | Drain to Source Voltage (Vdss) | Vgs (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Package / Case | Package / Case [y] | Package / Case [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Central Semiconductor Corp | 2.5 W | N-Channel | 20 mOhm | 3 V | 11 A | Surface Mount | 8-SOIC | 30 V | 20 V | 860 pF | -55 °C | 150 °C | 4.5 V 10 V | 6.3 nC | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in |