TPCC8104,L1Q(CM

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Toshiba Semiconductor and Storage

MOSFET P-CH 30V 20A 8TSON

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Toshiba Semiconductor and Storage

MOSFET P-CH 30V 20A 8TSON

Technical Specifications

Parameters and characteristics for this part

Specification	TPCC8104,L1Q(CM

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	58 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	27 W, 700 mW
Rds On (Max) @ Id, Vgs	8.8 mOhm
Supplier Device Package	8-TSON Advance (3.1x3.1)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	20 V
Vgs (Max) [Min]	-25 V
Vgs(th) (Max) @ Id	2 V

Part	Vgs(th) (Max) @ Id	Operating Temperature	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Vgs (Max) [Max]	Vgs (Max) [Min]	Mounting Type	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage TPCC8104,L1Q(CM	2 V	150 °C	30 V	8-TSON Advance (3.1x3.1)	4.5 V 10 V	8-PowerVDFN	P-Channel	MOSFET (Metal Oxide)	20 A	58 nC	27 W 700 mW	20 V	-25 V	Surface Mount	8.8 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 30 V 20A (Ta) 700mW (Ta), 27W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)

Technical documentation and resources

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