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MOSFET P-CH 30V 20A 8TSON
| Part | Vgs(th) (Max) @ Id | Operating Temperature | Drain to Source Voltage (Vdss) | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Vgs (Max) [Max] | Vgs (Max) [Min] | Mounting Type | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 2 V | 150 °C | 30 V | 8-TSON Advance (3.1x3.1) | 4.5 V 10 V | 8-PowerVDFN | P-Channel | MOSFET (Metal Oxide) | 20 A | 58 nC | 27 W 700 mW | 20 V | -25 V | Surface Mount | 8.8 mOhm |