SFT1345-H

Obsolete

ON Semiconductor

MOSFET P-CH 100V 11A TP

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Obsolete

ON Semiconductor

MOSFET P-CH 100V 11A TP

Technical Specifications

Parameters and characteristics for this part

Specification	SFT1345-H

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	21 nC
Input Capacitance (Ciss) (Max) @ Vds	1020 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	35 W, 1 W
Rds On (Max) @ Id, Vgs	275 mOhm
Supplier Device Package	IPAK/TP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Rds On (Max) @ Id, Vgs	Technology	Package / Case	FET Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Operating Temperature	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id
ON Semiconductor SFT1345-H	275 mOhm	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA	P-Channel	IPAK/TP	4 V	10 V	1020 pF	21 nC	11 A	1 W 35 W	150 °C	20 V	100 V	Through Hole
ON Semiconductor SFT1341-C-TL-E	112 mOhm	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	P-Channel	DPACK/TP-FA			650 pF		10 A	1 W 15 W	150 °C		40 V	Surface Mount	8 nC	1.4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 100 V 11A (Ta) 1W (Ta), 35W (Tc) Through Hole IPAK/TP

Technical documentation and resources