MOSFET P-CH 100V 11A TP
| Part | Rds On (Max) @ Id, Vgs | Technology | Package / Case | FET Type | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Operating Temperature | Vgs (Max) | Drain to Source Voltage (Vdss) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 275 mOhm | MOSFET (Metal Oxide) | IPAK TO-251-3 Short Leads TO-251AA | P-Channel | IPAK/TP | 4 V | 10 V | 1020 pF | 21 nC | 11 A | 1 W 35 W | 150 °C | 20 V | 100 V | Through Hole | ||
ON Semiconductor | 112 mOhm | MOSFET (Metal Oxide) | DPAK (2 Leads + Tab) SC-63 TO-252-3 | P-Channel | DPACK/TP-FA | 650 pF | 10 A | 1 W 15 W | 150 °C | 40 V | Surface Mount | 8 nC | 1.4 V |