1N8033-GA

Obsolete

GeneSiC Semiconductor

DIODE SIL CARB 650V 4.3A TO276

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Obsolete

GeneSiC Semiconductor

DIODE SIL CARB 650V 4.3A TO276

Technical Specifications

Parameters and characteristics for this part

Specification	1N8033-GA

Capacitance @ Vr, F	274 pF
Current - Average Rectified (Io)	4.3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	250 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-276AA
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-276
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.65 V

Part	Current - Average Rectified (Io)	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Speed	Supplier Device Package	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Technology	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]
GeneSiC Semiconductor 1N8033-GA	4.3 A	TO-276AA	650 V	0 ns	No Recovery Time	TO-276	5 µA	274 pF	Surface Mount	1.65 V	SiC (Silicon Carbide) Schottky	-55 °C	250 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 650 V 4.3A Surface Mount TO-276

Technical documentation and resources