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DIODE SIL CARB 650V 4.3A TO276
| Part | Current - Average Rectified (Io) | Package / Case | Voltage - DC Reverse (Vr) (Max) [Max] | Reverse Recovery Time (trr) | Speed | Supplier Device Package | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Voltage - Forward (Vf) (Max) @ If | Technology | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 4.3 A | TO-276AA | 650 V | 0 ns | No Recovery Time | TO-276 | 5 µA | 274 pF | Surface Mount | 1.65 V | SiC (Silicon Carbide) Schottky | -55 °C | 250 °C |