TK6P53D(T6RSS-Q)

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Toshiba Semiconductor and Storage

MOSFET N-CH 525V 6A DPAK

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Toshiba Semiconductor and Storage

MOSFET N-CH 525V 6A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	TK6P53D(T6RSS-Q)

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	525 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	600 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	100 W
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.4 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	FET Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature	Power Dissipation (Max) [Max]	Technology	Drain to Source Voltage (Vdss)	Supplier Device Package
Toshiba Semiconductor and Storage TK6P53D(T6RSS-Q)	6 A	30 V	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	600 pF	Surface Mount	4.4 V	10 V	12 nC	150 °C	100 W	MOSFET (Metal Oxide)	525 V	DPAK

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General part information

N-Channel 525 V 6A (Ta) 100W (Tc) Surface Mount DPAK

Technical documentation and resources