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MOSFET N-CH 525V 6A DPAK
| Part | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | FET Type | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature | Power Dissipation (Max) [Max] | Technology | Drain to Source Voltage (Vdss) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 6 A | 30 V | N-Channel | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 600 pF | Surface Mount | 4.4 V | 10 V | 12 nC | 150 °C | 100 W | MOSFET (Metal Oxide) | 525 V | DPAK |