GC10MPS12-220

Obsolete

GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 54A TO220-2

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Obsolete

GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 54A TO220-2

Technical Specifications

Parameters and characteristics for this part

Specification	GC10MPS12-220

Capacitance @ Vr, F	660 pF
Current - Average Rectified (Io)	54 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Mounting Type	Technology	Current - Average Rectified (Io)	Supplier Device Package	Speed
GeneSiC Semiconductor GC10MPS12-220	TO-220-2	1.2 kV	0 ns	175 ░C	-55 C	660 pF	1.8 V	10 µA	Through Hole	SiC (Silicon Carbide) Schottky	54 A	TO-220-2	No Recovery Time

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1200 V 54A Through Hole TO-220-2

Technical documentation and resources