DIODE SIL CARB 1.2KV 54A TO220-2
| Part | Package / Case | Voltage - DC Reverse (Vr) (Max) [Max] | Reverse Recovery Time (trr) | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Capacitance @ Vr, F | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Mounting Type | Technology | Current - Average Rectified (Io) | Supplier Device Package | Speed |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | TO-220-2 | 1.2 kV | 0 ns | 175 ░C | -55 C | 660 pF | 1.8 V | 10 µA | Through Hole | SiC (Silicon Carbide) Schottky | 54 A | TO-220-2 | No Recovery Time |