SCS230AE2HRC

Obsolete

Rohm Semiconductor

DIODE ARRAY SIC 650V 15A TO-247

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Obsolete

Rohm Semiconductor

DIODE ARRAY SIC 650V 15A TO-247

Technical Specifications

Parameters and characteristics for this part

Specification	SCS230AE2HRC

Current - Average Rectified (Io) (per Diode)	15 A
Current - Reverse Leakage @ Vr	300 µA
Diode Configuration	1 Pair Common Cathode
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	TO-247-3
Qualification	AEC-Q101
Speed	No Recovery Time
Supplier Device Package	TO-247
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.55 V

1200V, 30A, 3-pin THD, Silicon-carbide (SiC) SBD

Part	Voltage - Forward (Vf) (Max) @ If	Diode Configuration	Package / Case	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io) (per Diode)	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Speed	Mounting Type	Operating Temperature - Junction	Grade	Qualification
Rohm Semiconductor SCS230KE2HRC11	1.6 V	1 Pair Common Cathode	TO-247-3	300 µA	15 A	0 ns	175 °C	TO-247	1.2 kV	SiC (Silicon Carbide) Schottky	No Recovery Time	Through Hole
Rohm Semiconductor SCS230KE2GC11	1.6 V	1 Pair Common Cathode	TO-247-3	300 µA	15 A	0 ns		TO-247N	1.2 kV	SiC (Silicon Carbide) Schottky	No Recovery Time	Through Hole	175 °C
Rohm Semiconductor SCS230AE2GC11	1.55 V	1 Pair Common Cathode	TO-247-3	300 µA	15 A	0 ns		TO-247N	650 V	SiC (Silicon Carbide) Schottky	No Recovery Time	Through Hole	175 °C
Rohm Semiconductor SCS230AE2HRC	1.55 V	1 Pair Common Cathode	TO-247-3	300 µA	15 A		175 °C	TO-247	650 V	SiC (Silicon Carbide) Schottky	No Recovery Time	Through Hole		Automotive	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$