Catalog
1200V, 30A, 3-pin THD, Silicon-carbide (SiC) SBD
Description
AI
Switching loss reduced, enabling high-speed switching . (3-pin package)
Beta
⌘K
1200V, 30A, 3-pin THD, Silicon-carbide (SiC) SBD
1200V, 30A, 3-pin THD, Silicon-carbide (SiC) SBD
| Part | Voltage - Forward (Vf) (Max) @ If | Diode Configuration | Package / Case | Current - Reverse Leakage @ Vr | Current - Average Rectified (Io) (per Diode) | Reverse Recovery Time (trr) | Operating Temperature - Junction [Max] | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] | Technology | Speed | Mounting Type | Operating Temperature - Junction | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 1.6 V | 1 Pair Common Cathode | TO-247-3 | 300 µA | 15 A | 0 ns | 175 °C | TO-247 | 1.2 kV | SiC (Silicon Carbide) Schottky | No Recovery Time | Through Hole | |||
Rohm Semiconductor | 1.6 V | 1 Pair Common Cathode | TO-247-3 | 300 µA | 15 A | 0 ns | TO-247N | 1.2 kV | SiC (Silicon Carbide) Schottky | No Recovery Time | Through Hole | 175 °C | |||
Rohm Semiconductor | 1.55 V | 1 Pair Common Cathode | TO-247-3 | 300 µA | 15 A | 0 ns | TO-247N | 650 V | SiC (Silicon Carbide) Schottky | No Recovery Time | Through Hole | 175 °C | |||
Rohm Semiconductor | 1.55 V | 1 Pair Common Cathode | TO-247-3 | 300 µA | 15 A | 175 °C | TO-247 | 650 V | SiC (Silicon Carbide) Schottky | No Recovery Time | Through Hole | Automotive | AEC-Q101 |