PJL9836A_R2_00001

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Panjit International Inc.

60V DUAL N-CHANNEL ENHANCEMENT M

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Panjit International Inc.

60V DUAL N-CHANNEL ENHANCEMENT M

Technical Specifications

Parameters and characteristics for this part

Specification	PJL9836A_R2_00001

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs [Max]	28 nC
Input Capacitance (Ciss) (Max) @ Vds	1680 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	1.7 W
Rds On (Max) @ Id, Vgs	21 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Power - Max [Max]	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Configuration	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Package / Case [y]	Package / Case [x]	Operating Temperature [Min]	Operating Temperature [Max]
Panjit International Inc. PJL9836A_R2_00001	1.7 W	2.5 V	Surface Mount	28 nC	60 V	MOSFET (Metal Oxide)	8-SOP	2 N-Channel (Dual)	6 A	21 mOhm	1680 pF	8-SOIC	3.9 mm	0.154 in	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 60V 6A (Ta) 1.7W (Ta) Surface Mount 8-SOP

Technical documentation and resources

No documents available