Beta
⌘K
60V DUAL N-CHANNEL ENHANCEMENT M
| Part | Power - Max [Max] | Vgs(th) (Max) @ Id | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Technology | Supplier Device Package | Configuration | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Package / Case [y] | Package / Case [x] | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Panjit International Inc. | 1.7 W | 2.5 V | Surface Mount | 28 nC | 60 V | MOSFET (Metal Oxide) | 8-SOP | 2 N-Channel (Dual) | 6 A | 21 mOhm | 1680 pF | 8-SOIC | 3.9 mm | 0.154 in | -55 °C | 150 °C |