2SC2229-Y(MIT,F,M)

Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 150V 0.05A TO92MOD

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Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 150V 0.05A TO92MOD

Technical Specifications

Parameters and characteristics for this part

Specification	2SC2229-Y(MIT,F,M)

Current - Collector (Ic) (Max) [Max]	50 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Frequency - Transition	120 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-92-3 Long Body, TO-226-3
Power - Max [Max]	800 mW
Supplier Device Package	TO-92MOD
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	150 V

Part	Power - Max [Max]	Operating Temperature	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Frequency - Transition	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Package / Case	Current - Collector (Ic) (Max) [Max]
Toshiba Semiconductor and Storage 2SC2229-Y(TE6,F,M)	800 mW	150 °C	100 nA	70	NPN	120 MHz	TO-92MOD	150 V	Through Hole	TO-226-3 TO-92-3 Long Body	50 mA
Toshiba Semiconductor and Storage 2SC2229-Y,F(J	800 mW	150 °C	100 nA	70	NPN	120 MHz	TO-92MOD	150 V	Through Hole	TO-226-3 TO-92-3 Long Body	50 mA
Toshiba Semiconductor and Storage 2SC2229-Y(MIT1,F,M	800 mW	150 °C	100 nA	70	NPN	120 MHz	TO-92MOD	150 V	Through Hole	TO-226-3 TO-92-3 Long Body	50 mA
Toshiba Semiconductor and Storage 2SC2229-O(MITIF,M)	800 mW	150 °C	100 nA	70	NPN	120 MHz	TO-92MOD	150 V	Through Hole	TO-226-3 TO-92-3 Long Body	50 mA
Toshiba Semiconductor and Storage 2SC2229-O(T6MIT1FM	800 mW	150 °C	100 nA	70	NPN	120 MHz	TO-92MOD	150 V	Through Hole	TO-226-3 TO-92-3 Long Body	50 mA
Toshiba Semiconductor and Storage 2SC2229-Y(T6MITIFM	800 mW	150 °C	100 nA	70	NPN	120 MHz	TO-92MOD	150 V	Through Hole	TO-226-3 TO-92-3 Long Body	50 mA
Toshiba Semiconductor and Storage 2SC2229-O(SHP,F,M)	800 mW	150 °C	100 nA	70	NPN	120 MHz	TO-92MOD	150 V	Through Hole	TO-226-3 TO-92-3 Long Body	50 mA
Toshiba Semiconductor and Storage 2SC2229-Y(MIT,F,M)	800 mW	150 °C	100 nA	70	NPN	120 MHz	TO-92MOD	150 V	Through Hole	TO-226-3 TO-92-3 Long Body	50 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 150 V 50 mA 120MHz 800 mW Through Hole TO-92MOD

Technical documentation and resources