2SC2229 Series

Catalog

TRANS NPN 150V 0.05A TO92MOD

Part	Power - Max [Max]	Operating Temperature	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Frequency - Transition	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Package / Case	Current - Collector (Ic) (Max) [Max]
Toshiba Semiconductor and Storage 2SC2229-Y(TE6,F,M)	800 mW	150 °C	100 nA	70	NPN	120 MHz	TO-92MOD	150 V	Through Hole	TO-226-3 TO-92-3 Long Body	50 mA
Toshiba Semiconductor and Storage 2SC2229-Y,F(J	800 mW	150 °C	100 nA	70	NPN	120 MHz	TO-92MOD	150 V	Through Hole	TO-226-3 TO-92-3 Long Body	50 mA
Toshiba Semiconductor and Storage 2SC2229-Y(MIT1,F,M	800 mW	150 °C	100 nA	70	NPN	120 MHz	TO-92MOD	150 V	Through Hole	TO-226-3 TO-92-3 Long Body	50 mA
Toshiba Semiconductor and Storage 2SC2229-O(MITIF,M)	800 mW	150 °C	100 nA	70	NPN	120 MHz	TO-92MOD	150 V	Through Hole	TO-226-3 TO-92-3 Long Body	50 mA
Toshiba Semiconductor and Storage 2SC2229-O(T6MIT1FM	800 mW	150 °C	100 nA	70	NPN	120 MHz	TO-92MOD	150 V	Through Hole	TO-226-3 TO-92-3 Long Body	50 mA
Toshiba Semiconductor and Storage 2SC2229-Y(T6MITIFM	800 mW	150 °C	100 nA	70	NPN	120 MHz	TO-92MOD	150 V	Through Hole	TO-226-3 TO-92-3 Long Body	50 mA
Toshiba Semiconductor and Storage 2SC2229-O(SHP,F,M)	800 mW	150 °C	100 nA	70	NPN	120 MHz	TO-92MOD	150 V	Through Hole	TO-226-3 TO-92-3 Long Body	50 mA
Toshiba Semiconductor and Storage 2SC2229-Y(MIT,F,M)	800 mW	150 °C	100 nA	70	NPN	120 MHz	TO-92MOD	150 V	Through Hole	TO-226-3 TO-92-3 Long Body	50 mA