W9425G6KH-5

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Winbond Electronics

IC DRAM 256MBIT PAR 66TSOP II

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Winbond Electronics

IC DRAM 256MBIT PAR 66TSOP II

Technical Specifications

Parameters and characteristics for this part

Part	Operating Temperature [Max]	Operating Temperature [Min]	Clock Frequency	Mounting Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Memory Size	Memory Organization	Access Time	Memory Format	Package / Case [custom]	Package / Case	Package / Case [custom]	Write Cycle Time - Word, Page	Supplier Device Package	Memory Interface	Memory Type
Winbond Electronics W9425G6KH-5 TR	70 °C	0 °C	200 MHz	Surface Mount	2.7 V	2.3 V	256 Gbit	16 M	55 ns	DRAM	0.4 in	66-TSSOP	0.4 in	15 ns	66-TSOP II	Parallel	Volatile
Winbond Electronics W9425G6KH-4	70 °C	0 °C	250 MHz	Surface Mount	2.7 V	2.4 V	256 Gbit	16 M	52 ns	DRAM	0.4 in	66-TSSOP	0.4 in	15 ns	66-TSOP II	Parallel	Volatile
Winbond Electronics W9425G6KH-5I TR	85 °C	-40 °C	200 MHz	Surface Mount	2.7 V	2.3 V	256 Gbit	16 M	55 ns	DRAM	0.4 in	66-TSSOP	0.4 in	15 ns	66-TSOP II	Parallel	Volatile
Winbond Electronics W9425G6KH-5I	85 °C	-40 °C	200 MHz	Surface Mount	2.7 V	2.3 V	256 Gbit	16 M	55 ns	DRAM	0.4 in	66-TSSOP	0.4 in	15 ns	66-TSOP II	Parallel	Volatile
Winbond Electronics W9425G6JB-5I TR	85 °C	-40 °C	200 MHz	Surface Mount	2.7 V	2.3 V	256 Gbit	16 M	55 ns	DRAM		60-TFBGA		15 ns	60-TFBGA (8x13)	Parallel	Volatile
Winbond Electronics W9425G6JB-5 TR	70 °C	0 °C	200 MHz	Surface Mount	2.7 V	2.3 V	256 Gbit	16 M	55 ns	DRAM		60-TFBGA		15 ns	60-TFBGA (8x13)	Parallel	Volatile
Winbond Electronics W9425G6KH-5	70 °C	0 °C	200 MHz	Surface Mount	2.7 V	2.3 V	256 Gbit	16 M	55 ns	DRAM	0.4 in	66-TSSOP	0.4 in	15 ns	66-TSOP II	Parallel	Volatile
Winbond Electronics W9425G6JB-5I	85 °C	-40 °C	200 MHz	Surface Mount	2.7 V	2.3 V	256 Gbit	16 M	55 ns	DRAM		60-TFBGA		15 ns	60-TFBGA (8x13)	Parallel	Volatile

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General part information

SDRAM - DDR Memory IC 256Mbit Parallel 200 MHz 55 ns 66-TSOP II

Technical documentation and resources