IC DRAM 256MBIT PAR 66TSOP II
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Clock Frequency | Mounting Type | Voltage - Supply [Max] | Voltage - Supply [Min] | Memory Size | Memory Organization | Access Time | Memory Format | Package / Case [custom] | Package / Case | Package / Case [custom] | Write Cycle Time - Word, Page | Supplier Device Package | Memory Interface | Memory Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Winbond Electronics | 70 °C | 0 °C | 200 MHz | Surface Mount | 2.7 V | 2.3 V | 256 Gbit | 16 M | 55 ns | DRAM | 0.4 in | 66-TSSOP | 0.4 in | 15 ns | 66-TSOP II | Parallel | Volatile |
Winbond Electronics | 70 °C | 0 °C | 250 MHz | Surface Mount | 2.7 V | 2.4 V | 256 Gbit | 16 M | 52 ns | DRAM | 0.4 in | 66-TSSOP | 0.4 in | 15 ns | 66-TSOP II | Parallel | Volatile |
Winbond Electronics | 85 °C | -40 °C | 200 MHz | Surface Mount | 2.7 V | 2.3 V | 256 Gbit | 16 M | 55 ns | DRAM | 0.4 in | 66-TSSOP | 0.4 in | 15 ns | 66-TSOP II | Parallel | Volatile |
Winbond Electronics | 85 °C | -40 °C | 200 MHz | Surface Mount | 2.7 V | 2.3 V | 256 Gbit | 16 M | 55 ns | DRAM | 0.4 in | 66-TSSOP | 0.4 in | 15 ns | 66-TSOP II | Parallel | Volatile |
Winbond Electronics | 85 °C | -40 °C | 200 MHz | Surface Mount | 2.7 V | 2.3 V | 256 Gbit | 16 M | 55 ns | DRAM | 60-TFBGA | 15 ns | 60-TFBGA (8x13) | Parallel | Volatile | ||
Winbond Electronics | 70 °C | 0 °C | 200 MHz | Surface Mount | 2.7 V | 2.3 V | 256 Gbit | 16 M | 55 ns | DRAM | 60-TFBGA | 15 ns | 60-TFBGA (8x13) | Parallel | Volatile | ||
Winbond Electronics | 70 °C | 0 °C | 200 MHz | Surface Mount | 2.7 V | 2.3 V | 256 Gbit | 16 M | 55 ns | DRAM | 0.4 in | 66-TSSOP | 0.4 in | 15 ns | 66-TSOP II | Parallel | Volatile |
Winbond Electronics | 85 °C | -40 °C | 200 MHz | Surface Mount | 2.7 V | 2.3 V | 256 Gbit | 16 M | 55 ns | DRAM | 60-TFBGA | 15 ns | 60-TFBGA (8x13) | Parallel | Volatile |