MSRT25080A

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GeneSiC Semiconductor

DIODE MODULE GP 800V 250A 3TOWER

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GeneSiC Semiconductor

DIODE MODULE GP 800V 250A 3TOWER

Technical Specifications

Parameters and characteristics for this part

Specification	MSRT25080A

Current - Average Rectified (Io) (per Diode)	250 A
Current - Reverse Leakage @ Vr	15 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Three Tower
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	Three Tower
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.2 V

Part	Technology	Current - Reverse Leakage @ Vr	Diode Configuration	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io) (per Diode)	Mounting Type	Package / Case
GeneSiC Semiconductor MSRT25080A	Standard	15 µA	1 Pair Common Cathode	Three Tower	800 V	Standard Recovery >500ns	200 mA	150 °C	-55 °C	1.2 V	250 A	Chassis Mount	Three Tower

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	25	$ 51.40

General part information

Diode Array 1 Pair Common Cathode 800 V 250A (DC) Chassis Mount Three Tower

Technical documentation and resources

No documents available