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DIODE MODULE GP 800V 250A 3TOWER
| Part | Technology | Current - Reverse Leakage @ Vr | Diode Configuration | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] | Speed | Speed | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) (per Diode) | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Standard | 15 µA | 1 Pair Common Cathode | Three Tower | 800 V | Standard Recovery >500ns | 200 mA | 150 °C | -55 °C | 1.2 V | 250 A | Chassis Mount | Three Tower |