G3R12MT12K

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GeneSiC Semiconductor

1200V 12M TO-247-4 G3R SIC MOSFE

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GeneSiC Semiconductor

1200V 12M TO-247-4 G3R SIC MOSFE

Technical Specifications

Parameters and characteristics for this part

Specification	G3R12MT12K

Current - Continuous Drain (Id) @ 25°C	157 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	18 V, 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	288 nC
Input Capacitance (Ciss) (Max) @ Vds	9335 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max)	567 W
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	TO-247-4
Vgs (Max) [Max]	22 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	2.7 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max) [Min]	Vgs (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs
GeneSiC Semiconductor G3R12MT12K	9335 pF	2.7 V	Through Hole	1200 V	-10 V	22 V	15 V 18 V	157 A	TO-247-4	567 W	288 nC	TO-247-4	N-Channel	-55 °C	175 ░C	13 mOhm

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General part information

N-Channel 1200 V 157A (Tc) 567W (Tc) Through Hole TO-247-4

Technical documentation and resources