G3R12M Series

Catalog

1200V 12M TO-247-4 G3R SIC MOSFE

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max) [Min]	Vgs (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs
GeneSiC Semiconductor G3R12MT12K	9335 pF	2.7 V	Through Hole	1200 V	-10 V	22 V	15 V 18 V	157 A	TO-247-4	567 W	288 nC	TO-247-4	N-Channel	-55 °C	175 ░C	13 mOhm