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MOSFET N-CH 200V 580A Y3-LI
| Part | Package / Case | Technology | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | Vgs(th) (Max) @ Id | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | Y3-Li | MOSFET (Metal Oxide) | 580 A | 20 V | 10 V | N-Channel | 2750 nC | 200 V | 3.8 mOhm | Chassis Mount | 150 °C | -40 °C | 4 V | Y3-Li |