IC NVSRAM 1MBIT PAR 34PWRCAP
| Part | Access Time | Memory Organization | Memory Size | Technology | Memory Type | Memory Interface | Supplier Device Package | Voltage - Supply [Min] | Voltage - Supply [Max] | Mounting Type | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | Memory Format | Package / Case | Package / Case | Write Cycle Time - Word, Page | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices Inc./Maxim Integrated | 70 ns | 128K x 8 | 1 Mbit | NVSRAM (Non-Volatile SRAM) | Non-Volatile | Parallel | 34-PowerCap Module | 4.75 V | 5.25 V | Surface Mount | 34-PowerCap™ Module | 70 °C | 0 °C | NVSRAM | |||||
Analog Devices Inc./Maxim Integrated | 85 ns | 128K x 8 | 1 Mbit | NVSRAM (Non-Volatile SRAM) | Non-Volatile | Parallel | 32-EDIP | 4.75 V | 5.25 V | Through Hole | 32-DIP Module | 70 °C | 0 °C | NVSRAM | 0.6 in | 15.24 mm | 85 ns | ||
Analog Devices Inc./Maxim Integrated | 70 ns | 128K x 8 | 1 Mbit | NVSRAM (Non-Volatile SRAM) | Non-Volatile | Parallel | 32-EDIP | 4.75 V | 5.25 V | Through Hole | 32-DIP Module | 70 °C | 0 °C | NVSRAM | 0.6 in | 15.24 mm | |||
Analog Devices Inc./Maxim Integrated | 70 ns | 128K x 8 | 1 Mbit | NVSRAM (Non-Volatile SRAM) | Non-Volatile | Parallel | 34-PowerCap Module | 4.75 V | 5.25 V | Surface Mount | 34-PowerCap™ Module | 85 °C | -40 °C | NVSRAM | |||||
Analog Devices Inc./Maxim Integrated | 120 ns | 128K x 8 | 1 Mbit | NVSRAM (Non-Volatile SRAM) | Non-Volatile | Parallel | 32-EDIP | 4.75 V | 5.25 V | Through Hole | 32-DIP Module | 70 °C | 0 °C | NVSRAM | 0.6 in | 15.24 mm | 120 ns | ||
Analog Devices Inc./Maxim Integrated | 70 ns | 128K x 8 | 1 Mbit | NVSRAM (Non-Volatile SRAM) | Non-Volatile | Parallel | 34-PowerCap Module | 4.75 V | 5.25 V | Surface Mount | 34-PowerCap™ Module | 85 °C | -40 °C | NVSRAM | |||||
Analog Devices Inc./Maxim Integrated | 100 ns | 128K x 8 | 1 Mbit | NVSRAM (Non-Volatile SRAM) | Non-Volatile | Parallel | 32-EDIP | 4.75 V | 5.25 V | Through Hole | 32-DIP Module | 70 °C | 0 °C | NVSRAM | 0.6 in | 15.24 mm | 100 ns | 100 ns | |
Analog Devices Inc./Maxim Integrated | 85 ns | 128K x 8 | 1 Mbit | NVSRAM (Non-Volatile SRAM) | Non-Volatile | Parallel | 32-EDIP | 4.75 V | 5.25 V | Through Hole | 32-DIP Module | 70 °C | 0 °C | NVSRAM | 0.6 in | 15.24 mm | 85 ns | ||
Analog Devices Inc./Maxim Integrated | 70 ns | 128K x 8 | 1 Mbit | NVSRAM (Non-Volatile SRAM) | Non-Volatile | Parallel | 32-EDIP | 4.75 V | 5.25 V | Through Hole | 32-DIP Module | 70 °C | 0 °C | NVSRAM | 0.6 in | 15.24 mm | |||
Analog Devices Inc./Maxim Integrated | 70 ns | 128K x 8 | 1 Mbit | NVSRAM (Non-Volatile SRAM) | Non-Volatile | Parallel | 32-EDIP | 4.75 V | 5.25 V | Through Hole | 32-DIP Module | 85 °C | -40 °C | NVSRAM | 0.6 in | 15.24 mm |