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UCC5350-Q1 Series

Automotive ±5A single-channel isolated gate driver with Miller clamp or split outputs for SiC/IGBT

Manufacturer: Texas Instruments

Catalog

Automotive ±5A single-channel isolated gate driver with Miller clamp or split outputs for SiC/IGBT

Key Features

5kVRMS and 3kVRMS single-channel isolated gate driverAEC-Q100 qualified for automotive applicationsTemperature grade 1Functional Safety-Quality ManagedDocumentation available to aid functional safety system designFeature optionsSplit outputs, 8V UVLO (UCC5350SB-Q1)Miller clamp, 12V UVLO (UCC5350MC-Q1)±5A minimum peak current drive strength±10A typical peak current drive strength3V to 15V input supply voltageUp to 33V driver supply voltage8V and 12V UVLO options100V/ns minimum CMTINegative 5V handling capability on input pins100ns (maximum) propagation delay and <25ns part-to-part skew8-pin DWV (8.5mm creepage) and D (4mm creepage) packagesIsolation barrier life > 40 YearsSafety-related certifications:DIN EN IEC 60747-17(VDE 0884-17)UL 1577 componenet recognition programCMOS inputsOperating junction temperature: –40°C to +150°C5kVRMS and 3kVRMS single-channel isolated gate driverAEC-Q100 qualified for automotive applicationsTemperature grade 1Functional Safety-Quality ManagedDocumentation available to aid functional safety system designFeature optionsSplit outputs, 8V UVLO (UCC5350SB-Q1)Miller clamp, 12V UVLO (UCC5350MC-Q1)±5A minimum peak current drive strength±10A typical peak current drive strength3V to 15V input supply voltageUp to 33V driver supply voltage8V and 12V UVLO options100V/ns minimum CMTINegative 5V handling capability on input pins100ns (maximum) propagation delay and <25ns part-to-part skew8-pin DWV (8.5mm creepage) and D (4mm creepage) packagesIsolation barrier life > 40 YearsSafety-related certifications:DIN EN IEC 60747-17(VDE 0884-17)UL 1577 componenet recognition programCMOS inputsOperating junction temperature: –40°C to +150°C

Description

AI
The UCC5350-Q1 is a single-channel, isolated gate driver with 10A source and 10A sink typical peak current designed to drive MOSFETs, IGBTs, and SiC MOSFETs. The UCC5350-Q1 has the option for Miller clamp or Split Outputs. The CLAMP pin is used to connect the transistor gate to an internal FET beside the output to prevent false turn-on caused by Miller current injection. The split outputs option allows separate control of the rise and fall times of the gate voltage with OUTH and OUTL pins. The UCC5350-Q1 is available in a 4mm SOIC-8 (D) or 8.5mm wide body SOIC-8 (DWV) package and can support isolation voltage up to 3kVRMS and 5kVRMS, respectively. The input side is isolated from the output side with SiO2 capacitive isolation technology with longer than 40 years isolation barrier lifetime. The UCC5350-Q1 is a good fit for driving IGBTs or MOSFETs in applications such as high-voltage traction inverters and on-board chargers. Compared to an opto-isolated gate driver, the UCC5350-Q1 device has lower part-to-part skew, lower propagation delay, higher operating temperature, and higher CMTI. The UCC5350-Q1 is a single-channel, isolated gate driver with 10A source and 10A sink typical peak current designed to drive MOSFETs, IGBTs, and SiC MOSFETs. The UCC5350-Q1 has the option for Miller clamp or Split Outputs. The CLAMP pin is used to connect the transistor gate to an internal FET beside the output to prevent false turn-on caused by Miller current injection. The split outputs option allows separate control of the rise and fall times of the gate voltage with OUTH and OUTL pins. The UCC5350-Q1 is available in a 4mm SOIC-8 (D) or 8.5mm wide body SOIC-8 (DWV) package and can support isolation voltage up to 3kVRMS and 5kVRMS, respectively. The input side is isolated from the output side with SiO2 capacitive isolation technology with longer than 40 years isolation barrier lifetime. The UCC5350-Q1 is a good fit for driving IGBTs or MOSFETs in applications such as high-voltage traction inverters and on-board chargers. Compared to an opto-isolated gate driver, the UCC5350-Q1 device has lower part-to-part skew, lower propagation delay, higher operating temperature, and higher CMTI.