MOSFET N-CH 100V 9A TP
| Part | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Power Dissipation (Max) | Mounting Type | Vgs (Max) | Supplier Device Package | Technology | Drain to Source Voltage (Vdss) | Package / Case | FET Type | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 9 A | 225 mOhm | 490 pF | 9.8 nC | 150 °C | 4 V | 10 V | 1 W 19 W | Through Hole | 20 V | IPAK/TP | MOSFET (Metal Oxide) | 100 V | IPAK TO-251-3 Short Leads TO-251AA | N-Channel | |||
ON Semiconductor | 20 A | 51 mOhm | 750 pF | 150 °C | 4 V | 10 V | 1 W 23 W | Surface Mount | 20 V | TP-FA | MOSFET (Metal Oxide) | 60 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | N-Channel | 2.6 V | 16 nC | ||
ON Semiconductor | 17 A | 111 mOhm | 1030 pF | 19 nC | 150 °C | 4 V | 10 V | 1 W 35 W | Through Hole | 20 V | IPAK/TP | MOSFET (Metal Oxide) | 100 V | IPAK TO-251-3 Short Leads TO-251AA | N-Channel | |||
ON Semiconductor | 9 A | 225 mOhm | 490 pF | 9.8 nC | 150 °C | 4 V | 10 V | 1 W 19 W | Surface Mount | 20 V | DPACK/TP-FA | MOSFET (Metal Oxide) | 100 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | N-Channel | 2.6 V | ||
ON Semiconductor | 1.5 A | 8.1 Ohm | 130 pF | 6.3 nC | 150 °C | 1 W 20 W | Through Hole | 30 V | IPAK/TP | MOSFET (Metal Oxide) | 600 V | IPAK TO-251-3 Short Leads TO-251AA | N-Channel | 10 V |