DRAM CHIP MOBILE LPDDR4X SDRAM 4GBIT 128MX32 1.1V/1.8V 200-PIN WFBGA
| Part | Voltage - Supply [Min] | Voltage - Supply [Max] | Memory Size | Package / Case | Memory Organization | Write Cycle Time - Word, Page | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Memory Type | Clock Frequency | Mounting Type | Technology | Memory Format | Access Time | Supplier Device Package [y] | Supplier Device Package [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Winbond Electronics | 1.06 V 1.7 V | 1.17 V 1.95 V | 512 kb | 200-WFBGA | 128 M | 18 ns | 200-WFBGA (10x14.5) | 105 °C | -40 °C | Volatile | 1866 MHz | Surface Mount | SDRAM - Mobile LPDDR4X | DRAM | |||
Winbond Electronics | 1.06 V 1.7 V | 1.17 V 1.95 V | 512 kb | 200-WFBGA | 128 M | 18 ns | 200-WFBGA (10x14.5) | 105 °C | -40 °C | Volatile | 2.133 GHz | Surface Mount | SDRAM - Mobile LPDDR4X | DRAM | |||
Winbond Electronics | 1.06 V 1.7 V | 1.17 V 1.95 V | 512 kb | 200-WFBGA | 128 M | 18 ns | 200-WFBGA (10x14.5) | 105 °C | -40 °C | Volatile | 1866 MHz | Surface Mount | SDRAM - Mobile LPDDR4X | DRAM | |||
Winbond Electronics | 1.06 V 1.7 V | 1.17 V 1.95 V | 512 kb | 200-TFBGA | 128 M | 18 ns | 200-TFBGA | 105 °C | -40 °C | Volatile | 2.133 GHz | Surface Mount | SDRAM - Mobile LPDDR4X | DRAM | 3.6 ns | 14.5 | 10 |
Winbond Electronics | 1.06 V 1.7 V | 1.17 V 1.95 V | 512 kb | 200-WFBGA | 128 M | 18 ns | 200-WFBGA (10x14.5) | 105 °C | -40 °C | Volatile | 1.6 GHz | Surface Mount | SDRAM - Mobile LPDDR4X | DRAM |