10ETF06 Series

Manufacturer: Vishay General Semiconductor - Diodes Division

Catalog

DIODE GEN PURP 600V 10A TO263AB

Part	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]	Reverse Recovery Time (trr)	Technology	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case
Vishay General Semiconductor - Diodes Division VS-10ETF06STRR-M3	10 A	100 µA	1.2 V	200 ns	Standard	TO-263AB (D2PAK)	600 V	Surface Mount	200 mA 500 ns	150 °C	-40 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Vishay General Semiconductor - Diodes Division VS-10ETF06PBF	10 A		1.2 V	200 ns	Standard	TO-220AC	600 V	Through Hole	200 mA 500 ns	150 °C	-40 °C	TO-220-2
Vishay General Semiconductor - Diodes Division VS-10ETF06STRRPBF	10 A	100 µA	1.2 V	200 ns	Standard	TO-263AB (D2PAK)	600 V	Surface Mount	200 mA 500 ns	150 °C	-40 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Vishay General Semiconductor - Diodes Division VS-10ETF06STRL-M3	10 A	100 µA	1.2 V	200 ns	Standard	TO-263AB (D2PAK)	600 V	Surface Mount	200 mA 500 ns	150 °C	-40 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Vishay General Semiconductor - Diodes Division 10ETF06	10 A	100 µA	1.2 V	145 ns	Standard	TO-220AC	600 V	Through Hole	200 mA 500 ns	150 °C	-40 °C	TO-220-2
Vishay General Semiconductor - Diodes Division 10ETF06STRL	10 A	100 µA	1.2 V	145 ns	Standard	TO-263AB (D2PAK)	600 V	Surface Mount	200 mA 500 ns	150 °C	-40 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Vishay General Semiconductor - Diodes Division VS-10ETF06-M3	10 A	100 µA	1.2 V	200 ns	Standard	TO-220AC	600 V	Through Hole	200 mA 500 ns	150 °C	-40 °C	TO-220-2