MOSFET N/P-CH 40V 6A 8SOIC
| Part | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Rds On (Max) @ Id, Vgs | Power - Max [Max] | Configuration | Technology | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Package / Case [y] | Package / Case [x] | Supplier Device Package | Vgs(th) (Max) @ Id | FET Feature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | 5 A 6 A | 10.8 nC 22 nC | -55 °C | 150 °C | Surface Mount | 30 mOhm 45 mOhm | 2 W | N and P-Channel | MOSFET (Metal Oxide) | 40 V | 650 pF 1175 pF | 8-SOIC | 3.9 mm | 0.154 in | 8-SOIC | 3 V | |
Alpha & Omega Semiconductor Inc. | 5 A 6 A | 10.8 nC 22 nC | -55 °C | 150 °C | Surface Mount | 30 mOhm 45 mOhm | 2 W | N and P-Channel | MOSFET (Metal Oxide) | 40 V | 650 pF 1175 pF | 8-SOIC | 3.9 mm | 0.154 in | 8-SOIC | 3 V | |
Alpha & Omega Semiconductor Inc. | 5 A 6 A | 10.8 nC | -55 °C | 150 °C | Surface Mount | 30 mOhm | 2 W | N and P-Channel | MOSFET (Metal Oxide) | 40 V | 650 pF | 8-SOIC | 3.9 mm | 0.154 in | 8-SOIC | 3 V | Logic Level Gate |