Catalog
1200V, 5A, THD, Silicon-carbide (SiC) SBD
Description
AI
Switching loss reduced, enabling high-speed switching . (2-pin package)
Beta
⌘K
1200V, 5A, THD, Silicon-carbide (SiC) SBD
1200V, 5A, THD, Silicon-carbide (SiC) SBD
| Part | Operating Temperature - Junction | Supplier Device Package | Package / Case | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Capacitance @ Vr, F | Mounting Type | Reverse Recovery Time (trr) | Technology | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 175 °C | TO-220ACFP | TO-220-2 | 1.6 V | 5 A | 270 pF | Through Hole | 0 ns | SiC (Silicon Carbide) Schottky | No Recovery Time | 1.2 kV | 100 µA |