UCC27211A-Q1 Series

Automotive 4-A, 120-V half bridge gate driver with 8-V UVLO and negative voltage handling

Catalog

Automotive 4-A, 120-V half bridge gate driver with 8-V UVLO and negative voltage handling

Part	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Driven Configuration	Mounting Type	Input Type	Gate Type	Logic Voltage - VIL, VIH	High Side Voltage - Max (Bootstrap) [Max]	Channel Type	Supplier Device Package	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case [y]	Package / Case [x]	Package / Case	Number of Drivers	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Qualification	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]
Texas Instruments UCC27211DDA	4 A	4 A	Half-Bridge	Surface Mount	Non-Inverting	N-Channel MOSFET	1.3 V 2.8 V	120 V	Independent	8-SO PowerPad	17 V	8 V	3.9 mm	0.154 in	8-PowerSOIC	2	7.2 ns	5.5 ns	-40 °C	140 °C
Texas Instruments UCC27211AQDDARQ1	4 A	4 A	Half-Bridge	Surface Mount	Non-Inverting	N-Channel MOSFET		120 V	Independent	8-SO PowerPad	17 V	8 V	3.9 mm	0.154 in	8-PowerSOIC	2	7.2 ns	5.5 ns	-40 °C	140 °C	Automotive	AEC-Q100	1.2 V	2.55 V
Texas Instruments UCC27211DRMR	4 A	4 A	Half-Bridge	Surface Mount	Non-Inverting	N-Channel MOSFET	1.3 V 2.7 V	120 V	Independent	8-VSON (4x4)	17 V	8 V			8-VDFN Exposed Pad	2	7.2 ns	5.5 ns	-40 °C	140 °C
Texas Instruments UCC27211ADRMR	4 A	4 A	Half-Bridge	Surface Mount	Non-Inverting	N-Channel MOSFET	1.3 V 2.7 V	120 V	Independent	8-VSON (4x4)	17 V	8 V			8-VDFN Exposed Pad	2	7.2 ns	5.5 ns	-40 °C	140 °C
Texas Instruments UCC27211DDAR	4 A	4 A	Half-Bridge	Surface Mount	Non-Inverting	N-Channel MOSFET	1.3 V 2.8 V	120 V	Independent	8-SO PowerPad	17 V	8 V	3.9 mm	0.154 in	8-PowerSOIC	2	7.2 ns	5.5 ns	-40 °C	140 °C
Texas Instruments UCC27211ADRMT	4 A	4 A	Half-Bridge	Surface Mount	Non-Inverting	N-Channel MOSFET	1.3 V 2.7 V	120 V	Independent	8-VSON (4x4)	17 V	8 V			8-VDFN Exposed Pad	2	7.2 ns	5.5 ns	-40 °C	140 °C
Texas Instruments UCC27211D	4 A	4 A	Half-Bridge	Surface Mount	Non-Inverting	N-Channel MOSFET	1.3 V 2.7 V	120 V	Independent	8-SOIC	17 V	8 V	3.9 mm	0.154 in	8-SOIC	2	7.2 ns	5.5 ns	-40 °C	140 °C

Catalog

Automotive 4-A, 120-V half bridge gate driver with 8-V UVLO and negative voltage handling

Key Features

• AEC-Q100 Qualified for Automotive Applications: Device Temperature Grade 1–40°C to +150°C junction temperature rangeDrives two N-channel MOSFETs in high-side and low-side configuration with independent inputsMaximum boot voltage 120V DC3.7A source, 4.5A sink output currentsInput pins can tolerate –10V to +20V and are independent of supply voltage rangeTTL compatible inputs8V to 17V VDD operating range, (20V ABS MAX)7.2ns rise and 5.5ns fall time with 1000pF loadFast propagation delay times (20ns typical)4ns delay matchingSymmetrical undervoltage lockout for high-side and low-side driverAvailable in the industry standard SO-PowerPAD SOIC-8 packageAEC-Q100 Qualified for Automotive Applications: Device Temperature Grade 1–40°C to +150°C junction temperature rangeDrives two N-channel MOSFETs in high-side and low-side configuration with independent inputsMaximum boot voltage 120V DC3.7A source, 4.5A sink output currentsInput pins can tolerate –10V to +20V and are independent of supply voltage rangeTTL compatible inputs8V to 17V VDD operating range, (20V ABS MAX)7.2ns rise and 5.5ns fall time with 1000pF loadFast propagation delay times (20ns typical)4ns delay matchingSymmetrical undervoltage lockout for high-side and low-side driverAvailable in the industry standard SO-PowerPAD SOIC-8 package

Description

The UCC27211A-Q1 device driver is based on the popular UCC27201 MOSFET drivers; but, this device offers several significant performance improvements. The peak output pullup and pulldown current has been increased to 3.7A source and 4.5A sink and thereby allows for driving large power MOSFETs with minimized switching losses during the transition through the Miller Plateau of the MOSFET. The input structure can directly handle –10VDC, which increases robustness and also allows direct interface to gate-drive transformers without using rectification diodes. The inputs are also independent of supply voltage and have a 20V maximum rating. The switching node of the UCC27211A-Q1 (HS pin) can handle –(24 - VDD) V maximum, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance. The UCC27211A-Q1 (TTL inputs) has increased hysteresis that allows for interface to analog or digital PWM controllers with enhanced noise immunity. The low-side and high-side gate drivers are independently controlled and matched to 4ns between the turn on and turn off of each other. An on-chip 120V rated bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low if the drive voltage is below the specified threshold. The UCC27211A-Q1 device driver is based on the popular UCC27201 MOSFET drivers; but, this device offers several significant performance improvements. The peak output pullup and pulldown current has been increased to 3.7A source and 4.5A sink and thereby allows for driving large power MOSFETs with minimized switching losses during the transition through the Miller Plateau of the MOSFET. The input structure can directly handle –10VDC, which increases robustness and also allows direct interface to gate-drive transformers without using rectification diodes. The inputs are also independent of supply voltage and have a 20V maximum rating. The switching node of the UCC27211A-Q1 (HS pin) can handle –(24 - VDD) V maximum, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance. The UCC27211A-Q1 (TTL inputs) has increased hysteresis that allows for interface to analog or digital PWM controllers with enhanced noise immunity. The low-side and high-side gate drivers are independently controlled and matched to 4ns between the turn on and turn off of each other. An on-chip 120V rated bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low if the drive voltage is below the specified threshold.